Search results for: Thurber, W. Robert

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  1. 1

    Measurement techniques for high power semiconductor materials and devices : annual report, October, 1, 1980 to December 31, 1981

    Authors: Thurber, W. Robert
    Published: U.S. Department of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1982
    Physical Description: v, 60 pages : illustrations ; 28 cm.
    Government Document Microfilm Book
  2. 2

    Measurement techniques for high-power semiconductor materials and devices : annual report, January, 1, 1982 to March 31, 1983

    Authors: Thurber, W. Robert
    Published: U.S. Department of Commerce, National Bureau of Standards, National Engineering Laboratory, 1984
    Physical Description: iv, 46 pages : illustrations ; 28 cm.
    Government Document Microfilm Book
  3. 3

    Resistivity and carrier lifetime in gold-doped silicon

    Authors: Thurber, W. Robert
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1973
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    Physical Description: 1 online resource.
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    Government Document Electronic eBook
  4. 4

    Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981

    Authors: Thurber, W. Robert
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1982
    Other Authors:
    Physical Description: 1 online resource.
    Connect to online resource - All users (Federal Depository Library Program Persistant URL)
    Government Document Electronic eBook
  5. 5

    Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983

    Authors: Thurber, W. Robert
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1984
    Other Authors:
    Physical Description: 1 online resource.
    Connect to online resource - All users (Federal Depository Library Program Persistant URL)
    Government Document Electronic eBook
  6. 6

    Theory and application of a two-layer hall technique

    Authors: Larrabee, R. D.
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1978
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    Physical Description: 1 online resource.
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    Government Document Electronic eBook
  7. 7

    A FORTRAN program for calculating the electrical parameters of extrinsic silicon

    Authors: Larrabee, R. D.
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1980
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    Physical Description: 1 online resource.
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    Government Document Electronic eBook
  8. 8

    Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1979 to September 30, 1980

    Authors: Larrabee, R. C. (Ralph C.)
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1981
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    Physical Description: 1 online resource.
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    Government Document Electronic eBook
  9. 9

    Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites

    Authors: Seiler, David G.
    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1994
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    Physical Description: 1 online resource.
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    Government Document Electronic eBook