Search results for: Thurber, W. Robert
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Measurement techniques for high power semiconductor materials and devices : annual report, October, 1, 1980 to December 31, 1981
Authors: Thurber, W. Robert
Published: U.S. Department of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1982Physical Description: v, 60 pages : illustrations ; 28 cm.Holdings: Loading…
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2
Measurement techniques for high-power semiconductor materials and devices : annual report, January, 1, 1982 to March 31, 1983
Authors: Thurber, W. Robert
Published: U.S. Department of Commerce, National Bureau of Standards, National Engineering Laboratory, 1984Physical Description: iv, 46 pages : illustrations ; 28 cm.Holdings: Loading…
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3
Resistivity and carrier lifetime in gold-doped silicon
Authors: Thurber, W. RobertOther Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1973Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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4
Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1980 to December 31, 1981
Authors: Thurber, W. RobertOther Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1982Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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5
Measurement techniques for high-power semiconductor materials and devices : annual report, January 1, 1982 to March 31, 1983
Authors: Thurber, W. RobertOther Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1984Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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6
Theory and application of a two-layer hall technique
Authors: Larrabee, R. D.Other Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1978Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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7
A FORTRAN program for calculating the electrical parameters of extrinsic silicon
Authors: Larrabee, R. D.Other Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1980Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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8
Measurement techniques for high power semiconductor materials and devices : annual report, October 1, 1979 to September 30, 1980
Authors: Larrabee, R. C. (Ralph C.)Other Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1981Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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9
Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satellites
Authors: Seiler, David G.Other Authors:
Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1994Physical Description: 1 online resource.Holdings: Loading…Connect to online resource - All users (Federal Depository Library Program Persistant URL)
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